FF1800R17IP5PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF1800R17IP5PBPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
52 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C
Published
2002
Series
PrimePACK™3+
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
14
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PUFM-X14
Number of Elements
2
Configuration
Half Bridge
Case Connection
ISOLATED
Power - Max
1800000W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
3600A
Turn On Time
530 ns
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 1800A
Turn Off Time-Nom (toff)
1060 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
105nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3
$1,204.74667
$3
FF1800R17IP5PBPSA1 Product Details
FF1800R17IP5PBPSA1 Description
The FF1800R17IP5PBPSA1 is a PrimePACK?3+B-series module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and pre-applied Thermal Interface Material. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module. Normal electrical connections between the dies include half-bridge, 3-level, dual, chopper, booster, etc.