FT150R12KE3GB4BDLA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FT150R12KE3GB4BDLA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
39
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X39
Number of Elements
3
Configuration
3 Independent
Case Connection
ISOLATED
Power - Max
700W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
200A
Turn On Time
350 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 150A
Turn Off Time-Nom (toff)
850 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
10.5nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
24
$198.66333
$4767.91992
FT150R12KE3GB4BDLA1 Product Details
FT150R12KE3GB4BDLA1 Description
FT150R12KE3GB4BDLA1 developed by Infineon Technologies is a type of IGBT module which is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.