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VS-GB400AH120N

VS-GB400AH120N

VS-GB400AH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 650A 2500W INT-A-PAK

SOT-23

VS-GB400AH120N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (5)
Operating Temperature -40°C~150°C TJ
Published 2015
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.5kW
Number of Elements 1
Configuration Single
Power - Max 2500W
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 650A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 30nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 400A (Typ)
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 30nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
12 $532.61000 $6391.32

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