MII400-12E4

new-10%

Manufacturer part number:MII400-12E4

Manufacturer:IXYS

Description:IGBT MOD 1200V 420A 1700W Y3LI

Case Package:SOT-23

Datasheet:MII400-12E4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	Y3-Li
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Box
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.7kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	MII
Pin Count	7
JESD-30 Code	R-XUFM-X7
Number of Elements	2
Configuration	Half Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Turn On Delay Time	170 ns
Power - Max	1700W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	680 ns
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	420A
Current - Collector Cutoff (Max)	3.3mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	17nF
Turn On Time	230 ns
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 300A
Turn Off Time-Nom (toff)	730 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	17nF @ 25V
RoHS Status	RoHS Compliant
Lead Free	Lead Free