FZ1200R45HL3BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FZ1200R45HL3BPSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
42 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
9
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Reference Standard
IEC-1287
JESD-30 Code
R-PUFM-X9
Number of Elements
3
Configuration
Single Switch
Case Connection
ISOLATED
Power - Max
15000W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
4500V
Current - Collector (Ic) (Max)
1200A
Turn On Time
1100 ns
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 1200A
Turn Off Time-Nom (toff)
6670 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
280nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FZ1200R45HL3BPSA1 Product Details
FZ1200R45HL3BPSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FZ1200R45HL3BPSA1 Applications
? UPSsystems
? Highpowerconverters
? Motordrives
? Windturbines
FZ1200R45HL3BPSA1 Features
? 500-mA low-dropout regulator with enable
? Available in fixed and adjustable (1.2-V to 5.5-V)