FZ1600R17KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FZ1600R17KE3NOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C TJ
Published
2002
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Qualification Status
Not Qualified
Number of Elements
2
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
8950W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
2300A
Turn On Time
750 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 600A
Turn Off Time-Nom (toff)
1770 ns
IGBT Type
NPT
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
145nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$795.73000
$795.73
FZ1600R17KE3NOSA1 Product Details
FZ1600R17KE3NOSA1 Description
FZ1600R17KE3NOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FZ1600R17KE3NOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 400A. The FZ1600R17KE3NOSA1 has 3 pins and it is available in Tube packaging way. IRG5K200HF12B has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FZ1600R17KE3NOSA1 Features
Input Capacitance (Cies) @ Vce: 26nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max): 1200V