BSM25GP120BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM25GP120BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
24
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
24
JESD-30 Code
R-XUFM-X24
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
230W
Polarity/Channel Type
N-CHANNEL
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
20A
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
45A
Turn On Time
90 ns
Vce(on) (Max) @ Vge, Ic
2.55V @ 15V, 25A
Turn Off Time-Nom (toff)
420 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
1.5nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$104.49900
$1044.99
BSM25GP120BOSA1 Product Details
BSM25GP120BOSA1 Description
BSM25GP120BOSA1 is a 1600v IGBT-Modules. The BSM25GP120BOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Industrial, Electronic point of sale (EPOS), Enterprise systems, and Enterprise projectors applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM25GP120BOSA1 is in the tray package with 230W Power dissipation.
BSM25GP120BOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1600v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 45A
Repetitive peak collector current Tp = 1 ms: 50A
Total power dissipation Tc = 25°C, Tvj max = 150: 230W