FZ2000R33HE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ2000R33HE4BOSA1 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C TJ
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Single Switch
Power - Max
4.2mW
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
3300V
Current - Collector (Ic) (Max)
2000A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 2kA (Typ)
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
280nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4113.64000
$4113.64
500
$4072.5036
$2036251.8
1000
$4031.3672
$4031367.2
1500
$3990.2308
$5985346.2
2000
$3949.0944
$7898188.8
2500
$3907.958
$9769895
FZ2000R33HE4BOSA1 Product Details
FZ2000R33HE4BOSA1 Description
FZ2000R33HE4BOSA1 IGBT module is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. IGBT modules have the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation. IGBT module is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment.