MID150-12A4

new-10%

Manufacturer part number:MID150-12A4

Manufacturer:IXYS

Description:Trans IGBT Module N-CH 1.2KV 180A 5-Pin Y3-DCB

Case Package:SOT-23

Datasheet:MID150-12A4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	Y3-DCB
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2000
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	760W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	MID
Pin Count	7
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	760W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	180A
Current - Collector Cutoff (Max)	7.5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.2kV
Input Capacitance	6.6nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 100A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	6.6nF @ 25V
VCEsat-Max	3 V
Height	30mm
Length	110mm
Width	62mm
RoHS Status	ROHS3 Compliant