FP10R12W1T4B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP10R12W1T4B11BOMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
23
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
23
ECCN Code
EAR99
Max Power Dissipation
105W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.85V
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
20A
Turn On Time
108 ns
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 10A
Turn Off Time-Nom (toff)
500 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
600pF @ 25V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$38.727447
$38.727447
10
$36.535327
$365.35327
100
$34.467290
$3446.729
500
$32.516311
$16258.1555
1000
$30.675765
$30675.765
FP10R12W1T4B11BOMA1 Product Details
FP10R12W1T4B11BOMA1 Description
FP10R12W1T4B11BOMA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FP10R12W1T4B11BOMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.