DF600R12IP4DBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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DF600R12IP4DBOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
10
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Series
PrimePack™2
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-XUFM-X8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
3350W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
600A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
370 ns
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 600A
Turn Off Time-Nom (toff)
1350 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
37nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$468.650148
$468.650148
10
$453.239989
$4532.39989
25
$450.089363
$11252.234075
50
$446.960639
$22348.03195
100
$437.767521
$43776.7521
500
$406.469379
$203234.6895
DF600R12IP4DBOSA1 Product Details
DF600R12IP4DBOSA1 Description
DF600R12IP4DBOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. DF600R12IP4DBOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 600A. The DF600R12IP4DBOSA1 has 10 pins and it is available in Module packaging way. DF600R12IP4DBOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
DF600R12IP4DBOSA1 Features
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
Input Capacitance (Cies) @ Vce: 37nF @ 25V
Current - Collector Cutoff (Max): 5mA
Voltage - Collector Emitter Breakdown (Max): 1200V