FZ400R17KE4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ400R17KE4HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Bulk
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
5
JESD-30 Code
R-XUFM-X3
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Turn On Time
355 ns
Collector Current-Max (IC)
550A
Turn Off Time-Nom (toff)
930 ns
Collector-Emitter Voltage-Max
1700V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$122.56800
$1225.68
FZ400R17KE4HOSA1 Product Details
FZ400R17KE4HOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.