FZ600R17KE3HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FZ600R17KE3HOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C TJ
Published
2002
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
5
JESD-30 Code
R-XUFM-X3
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
3150W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
840A
Turn On Time
400 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 600A
Turn Off Time-Nom (toff)
1200 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
54nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$168.88000
$168.88
FZ600R17KE3HOSA1 Product Details
FZ600R17KE3HOSA1 Description
FZ600R17KE3HOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FZ600R17KE3HOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.