IAUC100N08S5N031ATMA1

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Manufacturer part number:IAUC100N08S5N031ATMA1

Manufacturer:Infineon Technologies

Description:IAUC100N08S5N031ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IAUC100N08S5N031ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Operating Temperature	-55°C~175°C TJ
Series	OptiMOS™-5
Part Status	Active
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	compliant
Power Dissipation-Max	167W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	3.8V @ 95μA
Input Capacitance (Ciss) (Max) @ Vds	5525pF @ 40V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	76nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$3.16000	$3.16
500	$3.1284	$1564.2
1000	$3.0968	$3096.8
1500	$3.0652	$4597.8
2000	$3.0336	$6067.2
2500	$3.002	$7505

IAUC100N08S5N031ATMA1 Features

• N-channel - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

IAUC100N08S5N031ATMA1 Description

The MOSFET is the most common type of transistor today. Their primary use is to control conductivity, or how much electricity can flow, between its source and drain terminals based on the amount of voltage applied to its gate terminal.