Name: STF12N65M5
Brand: STMicroelectronics
SKU: STF12N65M5
Price: 3.24000 USD
Availability: InStock

new-10%

STF12N65M5

Manufacturer part number:STF12N65M5

Manufacturer:STMicroelectronics

Description:N-Channel Tube 430m Ω @ 4.3A, 10V ±25V 900pF @ 100V 22nC @ 10V TO-220-5 Full Pack

Case Package:SOT-23

Datasheet:STF12N65M5 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-5 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	430mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Base Part Number	STF12
Pin Count	3
Number of Elements	1
Power Dissipation-Max	25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	25W
Case Connection	ISOLATED
Turn On Delay Time	22.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	430m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 100V
Current - Continuous Drain (Id) @ 25°C	8.5A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	9.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	15.6 ns
Continuous Drain Current (ID)	8.5A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Height	16.4mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STF12N65M5 Product Details

Description

The STF12N65M5 is an N-channel 650 V, 0.39 ?, 8.5 A MDmesh? V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK. These products are N-channel MDmesh? V Power MOSFETs built on a cutting-edge proprietary vertical manufacturing technique with the well-known PowerMESH? horizontal layout architecture from STMicroelectronics. The resulting product is especially well suited for applications that need excellent power density and exceptional efficiency due to its extraordinarily low on-resistance, which is unmatched among silicon-based Power MOSFETs.