IXFH110N15T2

new-10%

Manufacturer part number:IXFH110N15T2

Manufacturer:IXYS

Description:MOSFET N-CH 150V 110A TO-247

Case Package:SOT-23

Datasheet:IXFH110N15T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	TrenchT2™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	480W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	480W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	110A
JEDEC-95 Code	TO-247AD
Drain-source On Resistance-Max	0.013Ohm
Pulsed Drain Current-Max (IDM)	300A
DS Breakdown Voltage-Min	150V
Avalanche Energy Rating (Eas)	800 mJ
RoHS Status	ROHS3 Compliant