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IFS100V12PT4BOSA1

IFS100V12PT4BOSA1

IFS100V12PT4BOSA1

Infineon Technologies

IFS100V12PT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IFS100V12PT4BOSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~65°C
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Three Phase Inverter
Halogen Free Not Halogen Free
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 100A
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 100A
NTC Thermistor Yes
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
6 $348.25500 $2089.53
IFS100V12PT4BOSA1 Product Details

IFS100V12PT4BOSA1         Description


IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 

IFS100V12PT4BOSA1         Applications

·High Power Converters

·Motor Drives

·UPS Systems

 

IFS100V12PT4BOSA1         Features

·Extended Operation Temperature Tyjop

·Low Switching Losses

·Low VCEsat

·Tvjop=150

·VCEsat with positiveTemperature Coefficient

 

Mechanical Features

·lsolated Base Plate

·Standard Housing


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