IFS150B12N3E4PB11BPSA1 Description

The IFS150B12N3E4PB11BPSA1 is an IGBT Module. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die.

The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module. Standard electrical connections between the dies include half-bridge, 3-level, dual, chopper, booster, etc.

Power may be turned on and off quickly and with excellent energy efficiency using an IGBT power module, which serves as a switch.

Due to its capacity to improve switching, temperature, weight, and cost performance, IGBT power modules are increasingly used as the preferred technology for high power applications.

IFS150B12N3E4PB11BPSA1 Features

Electrical Features

• Tvjop=150°C

• Low Switching Losses

• Low VCEsat

Mechanical Features

• Copper Base Plate

• Standard Housing

• High Power and Thermal Cycling Capability

• Isolated Base Plate

IFS150B12N3E4PB11BPSA1 Applications

• Motor Drives

• Servo Drives