MDI75-12A3

new-10%

Manufacturer part number:MDI75-12A3

Manufacturer:IXYS

Description:IGBT MODULE 1200V 90A 370W Y4M5

Case Package:SOT-23

Datasheet:MDI75-12A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Chassis Mount, Panel
Mounting Type	Chassis Mount
Package / Case	Y4-M5
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2000
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	370W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	MDI
Pin Count	7
JESD-30 Code	R-XUFM-X5
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	370W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	90A
Current - Collector Cutoff (Max)	4mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	3.3nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 50A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.3nF @ 25V
VCEsat-Max	3 V
Height	30mm
Length	94mm
Width	34mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free