IGD01N120H2BUMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IGD01N120H2BUMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e3
Pbfree Code
no
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
28W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
JEDEC-95 Code
TO-252AA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
3.2A
Test Condition
800V, 1A, 241 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 1A
Gate Charge
8.6nC
Current - Collector Pulsed (Icm)
3.5A
Td (on/off) @ 25°C
13ns/370ns
Switching Energy
140μJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.61872
$1.23744
IGD01N120H2BUMA1 Product Details
IGD01N120H2BUMA1 Description
IGD01N120H2BUMA1 is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 1200V. The operating temperature of the IGD01N120H2BUMA1 is -40°C~150°C TJ and its maximum power dissipation is 28W. IGD01N120H2BUMA1 has 4 pins and it is available in Tape & Reel (TR) packaging way. The Vce(on) (Max) @ Vge, Ic of IGD01N120H2BUMA1 is 2.8V @ 15V, 1A.
IGD01N120H2BUMA1 Features
Test Condition: 800V, 1A, 241 Ω, 15V
Voltage - Collector Emitter Breakdown (Max): 1200V