NGTB40N60IHLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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NGTB40N60IHLWG Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Weight
6.500007g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
250W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Reverse Recovery Time
400 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Turn On Time
110 ns
Test Condition
400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
Turn Off Time-Nom (toff)
230 ns
IGBT Type
Trench Field Stop
Gate Charge
130nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
70ns/140ns
Switching Energy
400μJ (off)
Height
21.08mm
Length
16.26mm
Width
5.3mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.534456
$1.534456
10
$1.447600
$14.476
100
$1.365660
$136.566
500
$1.288359
$644.1795
1000
$1.215433
$1215.433
NGTB40N60IHLWG Product Details
NGTB40N60IHLWG Description
NGTB40N60IHLWG developed by ON Semiconductor emerges as an Insulated Gate Bipolar Transistor (IGBT) with a robust and cost-effective Field Stop (FS) Trench construction. Both low on?state voltage and minimal switching loss are provided to enable it well suited for resonant or soft switching applications. It is co-packaged with a rugged co?packaged free-wheeling diode featuring a low forward voltage. The NGTB40N60IHLWG is able to provide high efficiency in demanding switching applications.
NGTB40N60IHLWG Features
A rugged co?packaged free wheeling diode
A robust and cost-effective Field Stop (FS) Trench construction