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NGTB40N60IHLWG

NGTB40N60IHLWG

NGTB40N60IHLWG

ON Semiconductor

NGTB40N60IHLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB40N60IHLWG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 400 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 110 ns
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Turn Off Time-Nom (toff) 230 ns
IGBT Type Trench Field Stop
Gate Charge 130nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 70ns/140ns
Switching Energy 400μJ (off)
Height 21.08mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.534456 $1.534456
10 $1.447600 $14.476
100 $1.365660 $136.566
500 $1.288359 $644.1795
1000 $1.215433 $1215.433
NGTB40N60IHLWG Product Details

NGTB40N60IHLWG Description


NGTB40N60IHLWG  developed by ON Semiconductor emerges as an Insulated Gate Bipolar Transistor (IGBT) with a robust and cost-effective Field Stop (FS) Trench construction. Both low on?state voltage and minimal switching loss are provided to enable it well suited for resonant or soft switching applications. It is co-packaged with a rugged co?packaged free-wheeling diode featuring a low forward voltage. The NGTB40N60IHLWG is able to provide high efficiency in demanding switching applications. 



NGTB40N60IHLWG Features


A rugged co?packaged free wheeling diode

A robust and cost-effective Field Stop (FS) Trench construction

Low on?state voltage 

Minimal switching loss



NGTB40N60IHLWG Applications


Inductive heating

Soft switching


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