APT50GT60BRDQ2G

new-10%

Manufacturer part number:APT50GT60BRDQ2G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247

Case Package:SOT-23

Datasheet:APT50GT60BRDQ2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	Thunderbolt IGBT®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	446W
Current Rating	110A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	110A
Reverse Recovery Time	22 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2V
Turn On Time	46 ns
Test Condition	400V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 50A
Continuous Collector Current	110A
Turn Off Time-Nom (toff)	365 ns
IGBT Type	NPT
Gate Charge	240nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	14ns/240ns
Switching Energy	995μJ (on), 1070μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	5V
Height	5.31mm
Length	21.46mm
Width	16.26mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free