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IGP03N120H2XKSA1

IGP03N120H2XKSA1

IGP03N120H2XKSA1

Infineon Technologies

IGP03N120H2XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGP03N120H2XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2008
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 62.5W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 9.6A
Turn On Time 16.1 ns
Test Condition 800V, 3A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Turn Off Time-Nom (toff) 403 ns
Gate Charge 22nC
Current - Collector Pulsed (Icm) 9.9A
Td (on/off) @ 25°C 9.2ns/281ns
Switching Energy 290μJ
RoHS Status RoHS Compliant
IGP03N120H2XKSA1 Product Details

IGP03N120H2XKSA1 Description


The IGP03N120H2XKSA1 is a IGBT using HighSpeed 2-Technology.



IGP03N120H2XKSA1 Features


  • 2nd generation HighSpeed-Technology for 1200V applications offers:

- loss reduction in resonant circuits

- temperature stable behaviour

- parallel switching capability

- tight parameter distribution

- Eoff optimized for IC =3A

  • Qualified according to JEDEC2  for target applications

  • Pb-free lead plating; RoHS compliant 



IGP03N120H2XKSA1 Applications


  • SMPS

  • Lamp Ballast

  • ZVS-Converter

  • optimised for soft-switching / resonant topologies 


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