IGP30N65H5XKSA1

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Manufacturer part number:IGP30N65H5XKSA1

Manufacturer:Infineon Technologies

Description:IGP30N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IGP30N65H5XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2013
Series	TrenchStop™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Max Power Dissipation	188W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	188W
Transistor Application	POWER CONTROL
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	55A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	650V
Turn On Time	28 ns
Test Condition	400V, 15A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Turn Off Time-Nom (toff)	224 ns
IGBT Type	Trench
Gate Charge	70nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	19ns/177ns
Switching Energy	280μJ (on), 100μJ (off)
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free