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SKB02N120ATMA1

SKB02N120ATMA1

SKB02N120ATMA1

Infineon Technologies

SKB02N120ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SKB02N120ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 62W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 62W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 6.2A
Reverse Recovery Time 50 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 40 ns
Test Condition 800V, 2A, 91 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 2A
Turn Off Time-Nom (toff) 375 ns
IGBT Type NPT
Gate Charge 11nC
Current - Collector Pulsed (Icm) 9.6A
Td (on/off) @ 25°C 23ns/260ns
Switching Energy 220μJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.445428 $13.445428
10 $12.684366 $126.84366
100 $11.966383 $1196.6383
500 $11.289041 $5644.5205
1000 $10.650038 $10650.038
SKB02N120ATMA1 Product Details

SKB02N120ATMA1 Description

 

SKB02N120ATMA1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SKB02N120ATMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SKB02N120ATMA1 has the common source configuration.

 

 

SKB02N120ATMA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

SKB02N120ATMA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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