AUIRGDC0250 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
AUIRGDC0250 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
25 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
SUPER-220™ (TO-273AA)
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2015
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
543W
Input Type
Standard
Power - Max
543W
Collector Emitter Voltage (VCEO)
1.57V
Max Collector Current
141A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
141A
Collector Emitter Saturation Voltage
1.57V
Test Condition
600V, 33A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic
1.57V @ 15V, 33A
Gate Charge
227nC
Current - Collector Pulsed (Icm)
99A
Td (on/off) @ 25°C
-/485ns
Switching Energy
15mJ (off)
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.32000
$6.32
50
$5.44240
$272.12
100
$4.72560
$472.56
500
$4.11498
$2057.49
1,000
$3.58401
$3.58401
AUIRGDC0250 Product Details
AUIRGDC0250 Description
IGBT AUIRGDC0250 is a kind of composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), which has the advantages of the high input impedance of MOSFET and low on-state voltage drop of GTR. It is designed based on planar IGBT technology for low switching losses, low VCE(on), and rugged transient performance in soft switching applications.