IGW40N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGW40N60H3FKSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Weight
6.500007g
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
306W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
306W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.95V
Turn On Time
48 ns
Test Condition
400V, 40A, 7.9 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
Turn Off Time-Nom (toff)
249 ns
IGBT Type
Trench Field Stop
Gate Charge
223nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
19ns/197ns
Switching Energy
1.68mJ
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.775195
$6.775195
10
$6.391694
$63.91694
100
$6.029899
$602.9899
500
$5.688585
$2844.2925
1000
$5.366589
$5366.589
IGW40N60H3FKSA1 Product Details
IGW40N60H3FKSA1 Description
IGW40N60H3FKSA1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW40N60H3FKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGW40N60H3FKSA1 has the common source configuration.