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IGW40N60H3FKSA1

IGW40N60H3FKSA1

IGW40N60H3FKSA1

Infineon Technologies

IGW40N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGW40N60H3FKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 306W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 306W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V
Turn On Time 48 ns
Test Condition 400V, 40A, 7.9 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Turn Off Time-Nom (toff) 249 ns
IGBT Type Trench Field Stop
Gate Charge 223nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 19ns/197ns
Switching Energy 1.68mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.775195 $6.775195
10 $6.391694 $63.91694
100 $6.029899 $602.9899
500 $5.688585 $2844.2925
1000 $5.366589 $5366.589
IGW40N60H3FKSA1 Product Details

IGW40N60H3FKSA1 Description

 

IGW40N60H3FKSA1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW40N60H3FKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGW40N60H3FKSA1 has the common source configuration.

 

 

IGW40N60H3FKSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IGW40N60H3FKSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 

 


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