Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STGB20V60DF

  • STGB20V60DF
  • STGB20V60DF

STGB20V60DF

STGB20V60DF

STMicroelectronics

STGB20V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB20V60DF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 2.240009g
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 167W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGB20
Element Configuration Single
Input Type Standard
Power - Max 167W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 40 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Max Breakdown Voltage 600V
Test Condition 400V, 20A, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
IGBT Type Trench Field Stop
Gate Charge 116nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 38ns/149ns
Switching Energy 200μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V
Height 4.6mm
Length 10.4mm
Width 9.35mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.729520 $10.72952
10 $10.122189 $101.22189
100 $9.549235 $954.9235
500 $9.008712 $4504.356
1000 $8.498785 $8498.785
STGB20V60DF Product Details

STGB20V60DF Description


This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. The component is an IGBT from the "V" series, which offers the best balance between conduction and switching losses to enhance the efficiency of very high frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat) temperature coefficient and a very narrow parameter distribution.



STGB20V60DF Features


? Tight parameters distribution


? Paralleling safely


? Low thermal conductivity


? Antiparallel diode with very quick soft recovery


Lead-free packaging



STGB20V60DF Applications


? solar power inverters


? Continuity of electricity supply


? Welder


? Power factor adjustment


? Converters with a very high frequency


Related Part Number

STGB14NC60KDT4
STMicroelectronics
STGB14NC60KDT4
$0 $/piece
IXGQ85N33PCD1
IXYS
IXGQ85N33PCD1
$0 $/piece
STGWT80H65DFB
STMicroelectronics
STGWT80H65DFB
$0 $/piece
HGTG30N60B3
Rochester Electronics, LLC
HGTG30N60B3
$0 $/piece
STGP35HF60W
STMicroelectronics
STGP35HF60W
$0 $/piece
STGW40H65DFB-4
STMicroelectronics
STGW40H65DFB-4
$0 $/piece
ISL9V5045S3ST-F085
ON Semiconductor
ISL9V5045S3ST-F085
$0 $/piece
IKW50N65WR5XKSA1
Infineon Technologies
IKW50N65WR5XKSA1
$0 $/piece
FGD3040G2
ON Semiconductor
FGD3040G2
$0 $/piece
STGF10NB60SD
STMicroelectronics
STGF10NB60SD
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News