FGA70N30TDTU

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Manufacturer part number:FGA70N30TDTU

Manufacturer:ON Semiconductor

Description:FGA70N30TDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA70N30TDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	201W
Element Configuration	Single
Input Type	Standard
Collector Emitter Voltage (VCEO)	1.5V
Reverse Recovery Time	21ns
Collector Emitter Breakdown Voltage	300V
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 20A
IGBT Type	Trench
Gate Charge	125nC
Current - Collector Pulsed (Icm)	160A
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$1.62000	$1.62
500	$1.6038	$801.9
1000	$1.5876	$1587.6
1500	$1.5714	$2357.1
2000	$1.5552	$3110.4
2500	$1.539	$3847.5

FGA70N30TDTU Description

The FGA70N30TDTU is a 300V, 70A PDP IGBT using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.