IGW40N65H5AXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGW40N65H5AXKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2017
Series
Automotive, AEC-Q101, TrenchStop™
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
250W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
74A
Collector Emitter Breakdown Voltage
650V
Turn On Time
31 ns
Test Condition
400V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
Turn Off Time-Nom (toff)
203 ns
IGBT Type
Trench
Gate Charge
92nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
20ns/149ns
Switching Energy
360μJ (on), 110μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
240
$4.69183
$1126.0392
IGW40N65H5AXKSA1 Product Details
IGW40N65H5AXKSA1 Description
IGW40N65H5AXKSA1 is a type of TRENCHSTOPTM 5 high-speed switching IGBT co-packed with RAPID 1 fast and soft antiparallel diode. It is designed based on a high-speed switching series 5th generation to provide best-in-class efficiency in hard switching and resonant topologies, 650V breakdown voltage, and low gate charge QG. Based on its specific characteristics, the IGW40N65H5AXKSA1 IGBT is well-suited for a wide range of applications, including a battery charger and DC/DC converter.
IGW40N65H5AXKSA1 Features
Maximum junction temperature175°C
650V breakdown voltage
Low QG
Best-in-Class efficiency in hard switching and resonant topologies