HGTG18N120BN Description


NPT (Non-Punch Through) IGBT HGTG18N120BN belongs to the family of MOS gated high-voltage switching IGBTs manufactured by ON Semiconductor that feature high input impedance of MOSFETs and low on-state conduction loss of bipolar transistors. Due to its superior performance, HGTG18N120BN is well suited for various high-voltage switching applications where moderate frequencies are required.


HGTG18N120BN Features


High input impedance
Low on-state conduction loss
MOS gated high-voltage switching IGBTs
Available in the JEDEC STYLE TO-247 package


HGTG18N120BN Applications


AC and DC motor controls
Power supplies and drivers for solenoids, relays, and contactors