IXXH50N60C3D1

new-10%

Manufacturer part number:IXXH50N60C3D1

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AD

Case Package:SOT-23

Datasheet:IXXH50N60C3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	600W
Base Part Number	IXX*N60
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	600W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	24 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	62 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	100A
Reverse Recovery Time	25 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.3V
Turn On Time	69 ns
Test Condition	360V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 36A
Turn Off Time-Nom (toff)	170 ns
IGBT Type	PT
Gate Charge	64nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	24ns/62ns
Switching Energy	720μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free