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IGW75N60H3FKSA1

IGW75N60H3FKSA1

IGW75N60H3FKSA1

Infineon Technologies

IGW75N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGW75N60H3FKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 428W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 140A
Test Condition 400V, 75A, 5.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
IGBT Type Trench Field Stop
Gate Charge 470nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 31ns/265ns
Switching Energy 3mJ (on), 1.7mJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.847760 $4.84776
10 $4.573358 $45.73358
100 $4.314489 $431.4489
500 $4.070273 $2035.1365
1000 $3.839880 $3839.88
IGW75N60H3FKSA1 Product Details

IGW75N60H3FKSA1 Description


Trench and Fieldstop High Speed IGBT technology



IGW75N60H3FKSA1 Features


?extremely low VcEsat


? low EMI.


?175°C is the maximum junction temperature


? JEDEC-qualified for the intended applications



IGW75N60H3FKSA1 Applications


  • Backup power systems

  • weld conversion devices


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