IGZ100N65H5XKSA1 Description

The IGZ100N65H5XKSA1 is a High speed 5 IGBT in TRENCHSTOP? 5 technology. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

IGZ100N65H5XKSA1 Features

• Plug and play replacement of previous generation IGBTs

• 650V breakdown voltage

• Low gate charge QG

• Maximum junction temperature 175°C

• Qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low loss switching thanks to Kelvin emitter pin in

• combination with TRENCHSTOP? 5

• Best-in-class efficiency in hard switching and resonant topologies

IGZ100N65H5XKSA1 Applications

• Mid to high range switching frequency converters

• Solar string inverters

• Uninterruptible power supplies

• Welding converters