IGZ75N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGZ75N65H5XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-4
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop™ 5
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
395W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
395W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
119A
Collector Emitter Breakdown Voltage
650V
Turn On Time
37 ns
Test Condition
400V, 37.5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
Turn Off Time-Nom (toff)
415 ns
IGBT Type
Trench
Gate Charge
166nC
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
26ns/347ns
Switching Energy
680μJ (on), 430μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.976357
$4.976357
10
$4.694677
$46.94677
100
$4.428940
$442.894
500
$4.178246
$2089.123
1000
$3.941741
$3941.741
IGZ75N65H5XKSA1 Product Details
IGZ75N65H5XKSA1 Description
IGZ75N65H5XKSA1 is a 650v High speed 5 IGBT in TRENCHSTOPTM 5 technology. The Infineon IGZ75N65H5XKSA1 can be applied in Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters, and Solar string inverters due to the following features. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor IGZ75N65H5XKSA1 is in the PG-TO247-4 package with 395 power dissipation.
IGZ75N65H5XKSA1 Features
Ultra low loss switching thanks to Kelvin emitter pin in combination with TRENCHSTOPTM 5
Best-in-class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBT
650V breakdown voltage
Low gate charge QG
Maximum junction temperature 175°C
Qualfied according to JEDEC for target applications