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IGZ75N65H5XKSA1

IGZ75N65H5XKSA1

IGZ75N65H5XKSA1

Infineon Technologies

IGZ75N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGZ75N65H5XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-4
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop™ 5
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 395W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 395W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 119A
Collector Emitter Breakdown Voltage 650V
Turn On Time 37 ns
Test Condition 400V, 37.5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn Off Time-Nom (toff) 415 ns
IGBT Type Trench
Gate Charge 166nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 26ns/347ns
Switching Energy 680μJ (on), 430μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.976357 $4.976357
10 $4.694677 $46.94677
100 $4.428940 $442.894
500 $4.178246 $2089.123
1000 $3.941741 $3941.741
IGZ75N65H5XKSA1 Product Details

IGZ75N65H5XKSA1 Description


IGZ75N65H5XKSA1 is a 650v High speed 5 IGBT in TRENCHSTOPTM 5 technology. The Infineon IGZ75N65H5XKSA1 can be applied in Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters, and Solar string inverters due to the following features. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor IGZ75N65H5XKSA1 is in the PG-TO247-4 package with 395 power dissipation.



IGZ75N65H5XKSA1 Features


Ultra low loss switching thanks to Kelvin emitter pin in combination with TRENCHSTOPTM 5

Best-in-class efficiency in hard switching and resonant topologies

Plug and play replacement of previous generation IGBT

650V breakdown voltage

Low gate charge QG

Maximum junction temperature 175°C

Qualfied according to JEDEC for target applications

Pb-free lead plating; RoHS compliant



IGZ75N65H5XKSA1 Applications


Uninterruptible power supplies

Welding converters

Mid to high range switching frequency converters

Solar string inverters


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