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IXGK320N60B3

IXGK320N60B3

IXGK320N60B3

IXYS

IGBT 600V 500A 1700W TO264

SOT-23

IXGK320N60B3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series GenX3™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.7kW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7kW
Case Connection COLLECTOR
Input Type Standard
Power - Max 1700W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 500A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 600V
Turn On Time 115 ns
Test Condition 480V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 100A
Turn Off Time-Nom (toff) 780 ns
IGBT Type PT
Gate Charge 585nC
Current - Collector Pulsed (Icm) 1200A
Td (on/off) @ 25°C 44ns/250ns
Switching Energy 2.7mJ (on), 3.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
25 $16.08400 $402.1

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