IXGK320N60B3

new-10%

Manufacturer part number:IXGK320N60B3

Manufacturer:IXYS

Description:IGBT 600V 500A 1700W TO264

Case Package:SOT-23

Datasheet:IXGK320N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.7kW
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	1.7kW
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	1700W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6V
Max Collector Current	500A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	600V
Turn On Time	115 ns
Test Condition	480V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 100A
Turn Off Time-Nom (toff)	780 ns
IGBT Type	PT
Gate Charge	585nC
Current - Collector Pulsed (Icm)	1200A
Td (on/off) @ 25°C	44ns/250ns
Switching Energy	2.7mJ (on), 3.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant