STGD5NB120SZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGD5NB120SZT4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
3.949996g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
5A
T[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STGD5
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
55W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
690 ns
Power - Max
75W
Transistor Application
POWER CONTROL
Rise Time
170ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
12.1 μs
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
10A
JEDEC-95 Code
TO-252AA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2V
Max Breakdown Voltage
1.2kV
Turn On Time
850 ns
Test Condition
960V, 5A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 5A
Continuous Collector Current
5A
Turn Off Time-Nom (toff)
14100 ns
Td (on/off) @ 25°C
690ns/12.1μs
Switching Energy
2.59mJ (on), 9mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.99665
$1.9933
5,000
$0.98580
$4.929
STGD5NB120SZT4 Product Details
STGD5NB120SZT4 IGBT Description
STMicroelectronics has produced an innovative family of IGBTs, the PowerMESHTM IGBTs, with remarkable performance using the latest high voltage technology based on a proprietary strip topology. The suffix "S" denotes a family designed to provide the lowest possible on-voltage drop for low frequency (1kHz) applications. The integrated collector-gate zener provides very precise active clamping. The STGD5NB120SZT4 is employed in a variety of applications due to its high current capabilities and low on-voltage drop.