STGD5NB120SZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGD5NB120SZT4 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
3.949996g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
5A
T[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STGD5
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
55W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
690 ns
Power - Max
75W
Transistor Application
POWER CONTROL
Rise Time
170ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
12.1 μs
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
10A
JEDEC-95 Code
TO-252AA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2V
Max Breakdown Voltage
1.2kV
Turn On Time
850 ns
Test Condition
960V, 5A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 5A
Continuous Collector Current
5A
Turn Off Time-Nom (toff)
14100 ns
Td (on/off) @ 25°C
690ns/12.1μs
Switching Energy
2.59mJ (on), 9mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STGD5NB120SZT4 Product Details
STGD5NB120SZT4 IGBT Description
STMicroelectronics has produced an innovative family of IGBTs, the PowerMESHTM IGBTs, with remarkable performance using the latest high voltage technology based on a proprietary strip topology. The suffix "S" denotes a family designed to provide the lowest possible on-voltage drop for low frequency (1kHz) applications. The integrated collector-gate zener provides very precise active clamping. The STGD5NB120SZT4 is employed in a variety of applications due to its high current capabilities and low on-voltage drop.