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STGD5NB120SZT4

STGD5NB120SZT4

STGD5NB120SZT4

STMicroelectronics

STGD5NB120SZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGD5NB120SZT4 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5A
T[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGD5
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 55W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 690 ns
Power - Max 75W
Transistor Application POWER CONTROL
Rise Time 170ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 12.1 μs
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 10A
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2V
Max Breakdown Voltage 1.2kV
Turn On Time 850 ns
Test Condition 960V, 5A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 5A
Continuous Collector Current 5A
Turn Off Time-Nom (toff) 14100 ns
Td (on/off) @ 25°C 690ns/12.1μs
Switching Energy 2.59mJ (on), 9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
STGD5NB120SZT4 Product Details

STGD5NB120SZT4 IGBT Description


STMicroelectronics has produced an innovative family of IGBTs, the PowerMESHTM IGBTs, with remarkable performance using the latest high voltage technology based on a proprietary strip topology. The suffix "S" denotes a family designed to provide the lowest possible on-voltage drop for low frequency (1kHz) applications. The integrated collector-gate zener provides very precise active clamping. The STGD5NB120SZT4 is employed in a variety of applications due to its high current capabilities and low on-voltage drop.



STGD5NB120SZT4 IGBT Features


High Current Capability

Off Losses Include Tail Current

Low On-voltage Drop (Vcesat)

High Input Impedance (Voltage Driven)

High Voltage Clamping Features



STGD5NB120SZT4 IGBT Applications


Light Dimmer

SMPS

AC/DC Motor Drivers

Inrush Current Limitation

UPS

Pre-heating For Electronic Lamp Ballast


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