IHD06N60RA

Name: IHD06N60RA
Brand: Infineon Technologies
SKU: IHD06N60RA
Availability: InStock

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Manufacturer part number:IHD06N60RA

Manufacturer:Infineon Technologies

Description:IHD06N60RA datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IHD06N60RA Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	88W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	88W
Transistor Application	POWER CONTROL
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	12A
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Test Condition	400V, 6A, 14.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 6A
Turn Off Time-Nom (toff)	325 ns
IGBT Type	Trench
Gate Charge	42nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	25ns/125ns
Switching Energy	150μJ
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.7V
RoHS Status	RoHS Compliant

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