IHW30N100R

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Manufacturer part number:IHW30N100R

Manufacturer:Infineon Technologies

Description:IHW30N100R datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IHW30N100R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	412W
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	412W
Case Connection	COLLECTOR
Input Type	Standard
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1kV
Max Collector Current	60A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Collector Emitter Saturation Voltage	1.75V
Test Condition	600V, 30A, 26 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 30A
Turn Off Time-Nom (toff)	988.4 ns
IGBT Type	Trench Field Stop
Gate Charge	209nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	-/846ns
Switching Energy	2.1mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.4V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free