FGA180N33ATTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGA180N33ATTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
44 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Max Power Dissipation
390W
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
390W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
330V
Max Collector Current
180A
Reverse Recovery Time
27 ns
Collector Emitter Breakdown Voltage
330V
Turn On Time
101 ns
Vce(on) (Max) @ Vge, Ic
1.4V @ 15V, 40A
Turn Off Time-Nom (toff)
362 ns
IGBT Type
Trench
Gate Charge
169nC
Current - Collector Pulsed (Icm)
450A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.440922
$1.440922
10
$1.359360
$13.5936
100
$1.282415
$128.2415
500
$1.209826
$604.913
1000
$1.141345
$1141.345
FGA180N33ATTU Product Details
FGA180N33ATTU Description
FGA180N33ATTU is a type of 330V, 180A PDP Trench IGBT developed by ON Semiconductor. It is specifically designed based on novel trench IGBT technology to maintain high current capability, high input impedance, and fast switching. The FGA180N33ATTU IGBT is well suited for PDP applications requiring low conduction and switching losses.