IHW15N120R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IHW15N120R3FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Input Type
Standard
Power - Max
254W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
30A
Test Condition
600V, 15A, 14.6 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 15A
Turn Off Time-Nom (toff)
460 ns
IGBT Type
Trench
Gate Charge
165nC
Current - Collector Pulsed (Icm)
45A
Td (on/off) @ 25°C
-/300ns
Switching Energy
700μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
240
$2.54300
$610.32
IHW15N120R3FKSA1 Product Details
IHW15N120R3FKSA1 Description
The IHW15N120R3 is a 1200V Reverse Conducting IGBT with a monolithic body diode. A powerful monolithic body diode with low forward voltage is designed for soft commutation only. TRENCHSTOP? technology applications offer very tight parameter distribution and high ruggedness as well easy parallel switching capability due to a positive temperature coefficient in VCE (sat). Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.