IHW25N120R2FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IHW25N120R2FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
365W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
50A
JEDEC-95 Code
TO-247AC
Voltage - Collector Emitter Breakdown (Max)
1200V
Test Condition
600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 25A
Turn Off Time-Nom (toff)
463.6 ns
IGBT Type
NPT
Gate Charge
60.7nC
Current - Collector Pulsed (Icm)
75A
Td (on/off) @ 25°C
-/324ns
Switching Energy
1.59mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.583046
$1.583046
10
$1.493440
$14.9344
100
$1.408906
$140.8906
500
$1.329156
$664.578
1000
$1.253921
$1253.921
IHW25N120R2FKSA1 Product Details
IHW25N120R2FKSA1 Description
The IHW25N120R2FKSA1 is a Reverse conducting IGBT with a monolithic body diode. Reverse conducting IGBT with a monolithic body diode that can be used for soft switching, resonant converters, inverterized microwave ovens, and inductive cooking. Due to the positive temperature coefficient in VCEsat, TRENCHSTOP? technology applications provide extremely tight parameter distribution, high ruggedness, temperature stable behavior, low VCEsat, and simple parallel switching capability.
IHW25N120R2FKSA1 Features
NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :