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IHW25N120R2FKSA1

IHW25N120R2FKSA1

IHW25N120R2FKSA1

Infineon Technologies

IHW25N120R2FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW25N120R2FKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 365W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 25A
Turn Off Time-Nom (toff) 463.6 ns
IGBT Type NPT
Gate Charge 60.7nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C -/324ns
Switching Energy 1.59mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.583046 $1.583046
10 $1.493440 $14.9344
100 $1.408906 $140.8906
500 $1.329156 $664.578
1000 $1.253921 $1253.921
IHW25N120R2FKSA1 Product Details

IHW25N120R2FKSA1 Description


The IHW25N120R2FKSA1 is a Reverse conducting IGBT with a monolithic body diode. Reverse conducting IGBT with a monolithic body diode that can be used for soft switching, resonant converters, inverterized microwave ovens, and inductive cooking. Due to the positive temperature coefficient in VCEsat, TRENCHSTOP? technology applications provide extremely tight parameter distribution, high ruggedness, temperature stable behavior, low VCEsat, and simple parallel switching capability.



IHW25N120R2FKSA1 Features


  • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

  • Low EMI

  • Qualified according to JEDEC1 for target applications

  • Pb-free lead plating; RoHS compliant

  • Powerful monolithic Body Diode with very low forward voltage

  • Body diode clamps negative voltages

  • Trench and Fieldstop technology for 1200 V applications offers :

 - very tight parameter distribution

 - high ruggedness, temperature stable behavior



IHW25N120R2FKSA1 Applications


  • Inductive Cooking

  • Soft Switching Applications

  • Switched Mode Power Supply

  • Uninterruptible Power Supply

  • AC and DC Motor Drives


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