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IXGP4N100

IXGP4N100

IXGP4N100

IXYS

IGBT 1000V 8A 40W TO220AB

SOT-23

IXGP4N100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 40W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 8A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 45 ns
Test Condition 800V, 4A, 120 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 4A
Turn Off Time-Nom (toff) 1220 ns
Gate Charge 13.6nC
Current - Collector Pulsed (Icm) 16A
Td (on/off) @ 25°C 20ns/390ns
Switching Energy 900μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $2.85860 $142.93

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