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IHW30N120R3FKSA1

  • IHW30N120R3FKSA1
  • IHW30N120R3FKSA1

IHW30N120R3FKSA1

IHW30N120R3FKSA1

Infineon Technologies

IHW30N120R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW30N120R3FKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 349W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 349W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 60A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 30A
Gate Charge 263nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/326ns
Switching Energy 1.47mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.644451 $3.644451
10 $3.438162 $34.38162
100 $3.243549 $324.3549
500 $3.059951 $1529.9755
1000 $2.886747 $2886.747
IHW30N120R3FKSA1 Product Details

IHW30N120R3FKSA1 Description


The IHW30N120R3FKSA1 is a Reverse conducting IGBT with a monolithic body diode.



IHW30N120R3FKSA1 Features


  • Powerful monolithic body diode with low forward voltage designed for soft commutation only

  • TRENCHSTOPTM technology offering:

    -very tight parameter distribution

    -high ruggedness, temperature stable behaviour

    -low VCEsat

    -easy parallel switching capability due to positive temperature coefficient in VCEsat

  • Low EMI

  • Qualified according to JESD-022 for target applications

  • Pb-free lead plating; RoHS compliant

  • Halogen-free(according to IEC61249-2-21)



IHW30N120R3FKSA1 Applications


  • Inductive cooking

  • Inverterized microwave ovens

  • Resonant converters

  • Soft switching applications




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