IRG8P25N120KDPBF Description

IRG8P25N120KDPBF is a 1200V insulated gate bipolar transistor with an ultrafast soft recovery diode. Its Benchmark Low VCE(ON) provides high efficiency in motor drive applications. 10μs Short Circuit SOA increases the margin for the short circuit protection scheme. A positive VCE(ON) temperature coefficient offers excellent current sharing in parallel operation. The Operating and Storage Temperature Range is between -40 and 150℃. And the Transistor IRG8P25N120KDPBF is in the TO-247AC-3 package with 180W power dissipation.

IRG8P25N120KDPBF Features

Benchmark Low VcE(ON)

10μs Short Circuit SOA

Positive VCE(ON) Temperature Coefficient

Square RBSOA and high lLM. rating

Lead-Free, RoHS compliant

IRG8P25N120KDPBF Applications

Industrial Motor Drive

UPS

Solar Inverters

Welding