STGW19NC60WD

new-10%

Manufacturer part number:STGW19NC60WD

Manufacturer:STMicroelectronics

Description:STGW19NC60WD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW19NC60WD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	125W
Base Part Number	STGW19
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	125W
Input Type	Standard
Turn On Delay Time	25 ns
Transistor Application	POWER CONTROL
Rise Time	7ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	90 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	42A
Reverse Recovery Time	31ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	33 ns
Test Condition	390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 12A
Turn Off Time-Nom (toff)	204 ns
Gate Charge	53nC
Td (on/off) @ 25°C	25ns/90ns
Switching Energy	81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free