IHW40N135R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IHW40N135R3FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2015
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
429W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Power Dissipation
215W
Input Type
Standard
Power - Max
429W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.35kV
Max Collector Current
80A
Collector Emitter Breakdown Voltage
1.35kV
Voltage - Collector Emitter Breakdown (Max)
1350V
Collector Emitter Saturation Voltage
1.85V
Test Condition
600V, 40A, 7.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 40A
IGBT Type
Trench
Gate Charge
365nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
-/343ns
Switching Energy
2.5mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.4V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.441053
$2.441053
10
$2.302880
$23.0288
100
$2.172528
$217.2528
500
$2.049555
$1024.7775
1000
$1.933542
$1933.542
IHW40N135R3FKSA1 Product Details
IHW40N135R3FKSA1 Description
The IHW40N135R3FKSA1 is a Reverse conducting IGBT with a monolithic body diode. An insulated-gate bipolar transistor is referred to as IGBT. It has an insulated gate terminal and is a bipolar transistor. The IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch in a single piece of hardware. High-voltage, high-current applications are suited for IGBTs.
IHW40N135R3FKSA1 Features
Low EMI
Qualified according to JESD-022 for target applications
Pb-free lead plating; RoHS compliant
Halogen free (according to IEC 61249-2-21)
Offers new higher breakdown voltage to 1350V for improved reliability
Powerful monolithic body diode with low forward voltage
designed for soft commutation only
TRENCHSTOP? technology offering:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat
- easy parallel switching capability due to positive temperature coefficient in VCEsat