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IHW40N135R3FKSA1

IHW40N135R3FKSA1

IHW40N135R3FKSA1

Infineon Technologies

IHW40N135R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW40N135R3FKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2015
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 429W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power Dissipation 215W
Input Type Standard
Power - Max 429W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35kV
Max Collector Current 80A
Collector Emitter Breakdown Voltage 1.35kV
Voltage - Collector Emitter Breakdown (Max) 1350V
Collector Emitter Saturation Voltage 1.85V
Test Condition 600V, 40A, 7.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 40A
IGBT Type Trench
Gate Charge 365nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C -/343ns
Switching Energy 2.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.441053 $2.441053
10 $2.302880 $23.0288
100 $2.172528 $217.2528
500 $2.049555 $1024.7775
1000 $1.933542 $1933.542
IHW40N135R3FKSA1 Product Details

IHW40N135R3FKSA1 Description


The IHW40N135R3FKSA1 is a Reverse conducting IGBT with a monolithic body diode. An insulated-gate bipolar transistor is referred to as IGBT. It has an insulated gate terminal and is a bipolar transistor. The IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch in a single piece of hardware. High-voltage, high-current applications are suited for IGBTs.



IHW40N135R3FKSA1 Features


  • Low EMI

  • Qualified according to JESD-022 for target applications

  • Pb-free lead plating; RoHS compliant

  • Halogen free (according to IEC 61249-2-21)

  • Offers new higher breakdown voltage to 1350V for improved reliability

  • Powerful monolithic body diode with low forward voltage

  • designed for soft commutation only

  • TRENCHSTOP? technology offering:

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- low VCEsat

- easy parallel switching capability due to positive temperature coefficient in VCEsat



IHW40N135R3FKSA1 Applications


  • Resonant converters

  • Soft switching applications

  • Inductive cooking

  • Inverterized microwave ovens

  • Switched Mode Power Supply


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