STGB3NB60FDT4

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Manufacturer part number:STGB3NB60FDT4

Manufacturer:STMicroelectronics

Description:STGB3NB60FDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB3NB60FDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	TIN LEAD
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	68W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	3A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGB3
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	68W
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	60ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	6A
Reverse Recovery Time	45ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.4V
Max Breakdown Voltage	600V
Turn On Time	16.5 ns
Test Condition	480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 3A
Turn Off Time-Nom (toff)	535 ns
Gate Charge	16nC
Current - Collector Pulsed (Icm)	24A
Td (on/off) @ 25°C	12.5ns/105ns
Switching Energy	125μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	Non-RoHS Compliant