IXBX55N300

new-10%

Manufacturer part number:IXBX55N300

Manufacturer:IXYS

Description:IGBT 3000V 130A 625W PLUS247

Case Package:SOT-23

Datasheet:IXBX55N300 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	BIMOSFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	625W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	625W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.2V
Max Collector Current	130A
Reverse Recovery Time	1.9 μs
Collector Emitter Breakdown Voltage	3kV
Voltage - Collector Emitter Breakdown (Max)	3000V
Turn On Time	637 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 55A
Turn Off Time-Nom (toff)	475 ns
Gate Charge	335nC
Current - Collector Pulsed (Icm)	600A
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant