IKB40N65EF5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKB40N65EF5ATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchStop™ 5
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
250W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
83ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
74A
Turn On Time
57 ns
Test Condition
400V, 40A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
Turn Off Time-Nom (toff)
199 ns
IGBT Type
Trench Field Stop
Gate Charge
95nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
22ns/160ns
Switching Energy
420μJ (on), 100μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$3.06453
$3.06453
2,000
$2.93530
$5.8706
IKB40N65EF5ATMA1 Product Details
IKB40N65EF5ATMA1 Description
IKB40N65EF5ATMA1 is a type of TRENCHSTOPTM 5 high-speed switching IGBT co-packed with fully rated current RAPID 1 anti-parallel diode. It is designed based on a high-speed switching series 5th generation to provide best-in-class efficiency in hard switching and resonant topologies, 650V breakdown voltage, and low QG. Based on its specific characteristics, IKB40N65EF5ATMA1 IGBT is well suited for a wide range of applications, including energy generation, industrial power supplies, metal treatment, and infrastructure–charge.