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IKB40N65EF5ATMA1

IKB40N65EF5ATMA1

IKB40N65EF5ATMA1

Infineon Technologies

IKB40N65EF5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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IKB40N65EF5ATMA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchStop™ 5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 83ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 74A
Turn On Time 57 ns
Test Condition 400V, 40A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Turn Off Time-Nom (toff) 199 ns
IGBT Type Trench Field Stop
Gate Charge 95nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 22ns/160ns
Switching Energy 420μJ (on), 100μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $3.06453 $3.06453
2,000 $2.93530 $5.8706
IKB40N65EF5ATMA1 Product Details

IKB40N65EF5ATMA1 Description


IKB40N65EF5ATMA1 is a type of TRENCHSTOPTM 5 high-speed switching IGBT co-packed with fully rated current RAPID 1 anti-parallel diode. It is designed based on a high-speed switching series 5th generation to provide best-in-class efficiency in hard switching and resonant topologies, 650V breakdown voltage, and low QG. Based on its specific characteristics, IKB40N65EF5ATMA1 IGBT is well suited for a wide range of applications, including energy generation, industrial power supplies, metal treatment, and infrastructure–charge.



IKB40N65EF5ATMA1 Features


Maximumjunctiontemperature175°C

650V breakdown voltage

LowQG

Full rated current RAPID 1 anti parallel diode

High speed H5 technology



IKB40N65EF5ATMA1 Applications


Energy generation

Industrial power supplies

Metal treatment

Infrastructure–charge


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